Science in China Series G: Physics, Mechanics and Astronomy

, Volume 52, Issue 12, pp 1944–1948

Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

Authors

  • QingLi Zhou
    • Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of PhysicsCapital Normal University
    • Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of PhysicsCapital Normal University
  • Tong Li
    • Department of Electronics EngineeringTianjin University of Technology and Education
  • Bin Jin
    • Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of PhysicsCapital Normal University
  • DongMei Zhao
    • Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of PhysicsCapital Normal University
  • CunLin Zhang
    • Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of PhysicsCapital Normal University
Article

DOI: 10.1007/s11433-009-0308-6

Cite this article as:
Zhou, Q., Shi, Y., Li, T. et al. Sci. China Ser. G-Phys. Mech. Astron. (2009) 52: 1944. doi:10.1007/s11433-009-0308-6

Abstract

The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p-Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly smaller than that of n-Si, due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power, the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model, showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

Keywords

semiconductorterahertzcarrier dynamics

Copyright information

© Science in China Press and Springer Berlin Heidelberg 2009