Science China Technological Sciences

, Volume 56, Issue 1, pp 98–102

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

  • XiaoPing Liu
  • GuangHan Fan
  • ShuWen Zheng
  • ChangChun Gong
  • TaiPing Lu
  • YunYan Zhang
  • YiQin Xu
  • Tao Zhang
Article

DOI: 10.1007/s11431-012-5052-x

Cite this article as:
Liu, X., Fan, G., Zheng, S. et al. Sci. China Technol. Sci. (2013) 56: 98. doi:10.1007/s11431-012-5052-x

Abstract

In this work, GaN-based light-emitting diodes (LEDs) with a p-GaN/i-InGaN short-period superlattice (SPSL) structure, p-GaN and undoped GaN last quantum barrier (LQB) have been numerically investigated by using the APSYS simulation software. It has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL structure. According to the simulation analysis, using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current leakage. Therefore, the radiative recombination and optical power are enhanced.

Keywords

GaN-based light-emitting diodes hole injection efficiency droop superlattice (SL) 

Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • XiaoPing Liu
    • 1
  • GuangHan Fan
    • 1
  • ShuWen Zheng
    • 1
  • ChangChun Gong
    • 1
  • TaiPing Lu
    • 1
  • YunYan Zhang
    • 1
  • YiQin Xu
    • 1
  • Tao Zhang
    • 1
  1. 1.Institute of Opto-electronic Materials and TechnologySouth China Normal UniversityGuangzhouChina

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