Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier
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- Liu, X., Fan, G., Zheng, S. et al. Sci. China Technol. Sci. (2013) 56: 98. doi:10.1007/s11431-012-5052-x
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In this work, GaN-based light-emitting diodes (LEDs) with a p-GaN/i-InGaN short-period superlattice (SPSL) structure, p-GaN and undoped GaN last quantum barrier (LQB) have been numerically investigated by using the APSYS simulation software. It has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL structure. According to the simulation analysis, using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current leakage. Therefore, the radiative recombination and optical power are enhanced.