Experimental Mechanics

, Volume 47, Issue 5, pp 649–658

Strain Measurements of Silicon Dioxide Microspecimens by Digital Imaging Processing

  • W. N. SharpeJr.
  • J. Pulskamp
  • D. S. Gianola
  • C. Eberl
  • R. G. Polcawich
  • R. J. Thompson
Article

DOI: 10.1007/s11340-006-9010-z

Cite this article as:
Sharpe, W.N., Pulskamp, J., Gianola, D.S. et al. Exp Mech (2007) 47: 649. doi:10.1007/s11340-006-9010-z

Abstract

Silicon dioxide thin film is a common component in electronic devices and in MEMS, but its mechanical properties have rarely been studied. Techniques have been adapted and developed to conduct tensile tests on 1.0 μm thick silicon dioxide specimens that are 100, 150, and 200 μm wide and either 1 or 2 mm long. One end of the specimen remains fastened to the substrate, and the other is glued to a silicon carbide fiber attached to a 30 g load cell mounted on a piezoelectric translation stage. Strain is measured by digital imaging of two gold lines applied to the gage section of the transparent specimen. Twenty-five tests yield a Young’s modulus of 60.1 ± 3.4 GPa and a fracture strength of 364 ± 57 MPa.

Keywords

Thin films Tensile testing Strain measurement Young’s modulus Silicon dioxide Fracture strength 

Copyright information

© Society for Experimental Mechanics 2007

Authors and Affiliations

  • W. N. SharpeJr.
    • 1
  • J. Pulskamp
    • 2
  • D. S. Gianola
    • 1
  • C. Eberl
    • 1
  • R. G. Polcawich
    • 2
  • R. J. Thompson
    • 1
  1. 1.Department of Mechanical EngineeringJohns Hopkins UniversityBaltimoreUSA
  2. 2.Sensors and Electron Devices DirectorateUS Army Research LaboratoryAdelphiUSA