Optical and Quantum Electronics

, Volume 46, Issue 10, pp 1195–1201

Physical modeling and simulation of a high-performance charge sensitive infrared phototransistor

Article

DOI: 10.1007/s11082-013-9808-8

Cite this article as:
Ding, L., Xu, P., Li, Y.Q. et al. Opt Quant Electron (2014) 46: 1195. doi:10.1007/s11082-013-9808-8
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Abstract

Charge sensitive infrared phototransistors are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at \(45\,\upmu \hbox {m}\) wavelength using Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resonant tunneling of carriers were applied and fine tuned to obtain a better simulation result. The calculated absorption spectrum and the simulated data graphs demonstrate that this cell can be used for long wavelength detection with relatively high sensitivity.

Keywords

Charge sensitive infrared phototransistor (CSIP) APSYS Terahertz Quantum well Two-dimensional electron gas (2DEG) 

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Laboratory of Polar Materials and Devices, School of Information Science and TechnologyEast China Normal UniversityShanghaiPeople’s Republic of China

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