Optical and Quantum Electronics

, Volume 45, Issue 7, pp 699–706

Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure

Article

DOI: 10.1007/s11082-013-9663-7

Cite this article as:
Ding, L., Fan, L., Li, Y.Q. et al. Opt Quant Electron (2013) 45: 699. doi:10.1007/s11082-013-9663-7

Abstract

In this paper we present a physical modeling and simulation result of an optical memory cell based on a semiconductor quantum-dot in quantum-well hybrid structure. The physical modeling and simulation were done in Crosslight Apsys software which offers advanced models for photoelectric devices. We have optimized the scan conditions, iterative algorithm and other simulation parameters in order to obtain a solution. The calculated I–V and C–V curves agree with the experimental results and demonstrate that the cell can be used for photon storage.

Keywords

Photon storage Quantum-dots Quantum-well APSYS Physical model 

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Laboratory of Polar Materials and Devices, School of Information Science and TechnologyEast China Normal UniversityShanghaiPeople’s Republic of China

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