Optical and Quantum Electronics

, Volume 45, Issue 7, pp 597–604

Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model

  • Chang Sheng Xia
  • Z. M. Simon Li
  • Yang Sheng
  • Li Wen Cheng
  • Wei Da Hu
  • Wei Lu
Article

DOI: 10.1007/s11082-012-9647-z

Cite this article as:
Xia, C.S., Simon Li, Z.M., Sheng, Y. et al. Opt Quant Electron (2013) 45: 597. doi:10.1007/s11082-012-9647-z

Abstract

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.

Keywords

InGaN/GaN Light-emitting diode LED Transport model Simulation 

Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • Chang Sheng Xia
    • 1
  • Z. M. Simon Li
    • 1
  • Yang Sheng
    • 1
  • Li Wen Cheng
    • 2
  • Wei Da Hu
    • 2
  • Wei Lu
    • 2
  1. 1.Crosslight Software Inc. China BranchShanghaiChina
  2. 2.National Lab for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina

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