Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model
- First Online:
- Cite this article as:
- Xia, C.S., Simon Li, Z.M., Sheng, Y. et al. Opt Quant Electron (2013) 45: 597. doi:10.1007/s11082-012-9647-z
- 281 Downloads
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.