Optical and Quantum Electronics

, Volume 45, Issue 7, pp 581–588

Self-consistent analysis of thermal far-field blooming of broad-area laser diodes

Article

DOI: 10.1007/s11082-012-9640-6

Cite this article as:
Piprek, J. Opt Quant Electron (2013) 45: 581. doi:10.1007/s11082-012-9640-6

Abstract

High-power broad-area laser diodes often suffer from a widening of the lateral (slow axis) far-field with increasing current, called thermal blooming, which is mainly caused by the non-uniform self-heating of the laser and has been studied for several decades. This paper presents the first self-consistent electro-thermal-optical simulation and analysis of such thermal blooming. Using a real InGaAs/GaAs broad-area laser as an example, a 900A/cm2 higher current density is shown to lead to only 0.5K stronger lateral temperature drop inside the ridge waveguide but to a one degree wider slow axis far field. Small non-thermal blooming is also observed.

Keywords

High-power broad-area laser diode Thermal blooming Slow axis far field Self-heating Thermal lens Lateral laser modes 

Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA

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