Optical and Quantum Electronics

, Volume 45, Issue 5, pp 381–387

Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer

  • W. Tian
  • Z. H. Feng
  • B. Liu
  • H. Xiong
  • J. B. Zhang
  • J. N. Dai
  • S. J. Cai
  • C. Q. Chen
Article

DOI: 10.1007/s11082-012-9636-2

Cite this article as:
Tian, W., Feng, Z.H., Liu, B. et al. Opt Quant Electron (2013) 45: 381. doi:10.1007/s11082-012-9636-2

Abstract

The advantages of ultraviolet light-emitting diodes with a single step quantum well used as electron blocking layer (EBL) are studied numerically. The energy band diagrams, hole concentrations, electrostatic field near the EBL, current–voltage curve and internal quantum efficiency (IQE) are investigated by using the Crosslight simulation programs. The simulation results show that the structure with a single step quantum well has better performance over the conventional one, which can be attributed to the mitigated band bending near the EBL due to the change of electrostatic field by using a step well. Therefore, the efficiency of hole injection is improved, with which both the IQE and the total lighting power are increased.

Keywords

Step quantum well Ultraviolet light-emitting diodes (UV-LEDs) Band bending Polarization 

Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • W. Tian
    • 1
    • 2
  • Z. H. Feng
    • 1
  • B. Liu
    • 1
  • H. Xiong
    • 2
  • J. B. Zhang
    • 2
  • J. N. Dai
    • 1
    • 2
  • S. J. Cai
    • 1
  • C. Q. Chen
    • 1
    • 2
  1. 1.Science and Technology on ASIC LaboratoryHebei Semiconductor Research InstituteShijiazhuangChina
  2. 2.Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhanChina

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