Optical and Quantum Electronics

, Volume 44, Issue 3, pp 89–94

Atomistic simulation of InGaN/GaN quantum disk LEDs

Authors

    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
  • Fabio Sacconi
    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
  • Matthias Auf der Maur
    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
  • Alessandro Pecchia
    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
  • Aldo Di Carlo
    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
Article

DOI: 10.1007/s11082-012-9554-3

Cite this article as:
Lopez, M., Sacconi, F., Auf der Maur, M. et al. Opt Quant Electron (2012) 44: 89. doi:10.1007/s11082-012-9554-3

Abstract

In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.

Keywords

Optoelectronics propertiesGaN nanocolumnInGaN quantum diskAtomistic simulationTight-binding

Copyright information

© Springer Science+Business Media, LLC. 2012