Atomistic simulation of InGaN/GaN quantum disk LEDs
- First Online:
- Cite this article as:
- Lopez, M., Sacconi, F., Auf der Maur, M. et al. Opt Quant Electron (2012) 44: 89. doi:10.1007/s11082-012-9554-3
- 153 Views
In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.