Article

Optical and Quantum Electronics

, Volume 44, Issue 3, pp 89-94

First online:

Atomistic simulation of InGaN/GaN quantum disk LEDs

  • Marco LopezAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata” Email author 
  • , Fabio SacconiAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata”
  • , Matthias Auf der MaurAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata”
  • , Alessandro PecchiaAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata”
  • , Aldo Di CarloAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata”

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Abstract

In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.

Keywords

Optoelectronics properties GaN nanocolumn InGaN quantum disk Atomistic simulation Tight-binding