, Volume 44, Issue 3-5, pp 89-94
Date: 04 Feb 2012

Atomistic simulation of InGaN/GaN quantum disk LEDs

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Abstract

In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.