Optical and Quantum Electronics

, Volume 44, Issue 3, pp 83–88

Band gap engineering approaches to increase InGaN/GaN LED efficiency

Article

DOI: 10.1007/s11082-011-9536-x

Cite this article as:
Auf der Maur, M., Lorenz, K. & Di Carlo, A. Opt Quant Electron (2012) 44: 83. doi:10.1007/s11082-011-9536-x

Abstract

Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.

Keywords

LED Nitrides Simulation IQE Band gap engineering 

Copyright information

© Springer Science+Business Media, LLC. 2012

Authors and Affiliations

  1. 1.Department of Electronic EngineeringUniversity of Rome “Tor Vergata”RomeItaly
  2. 2.Unidade de Física e Aceleradores, Instituto Tecnologico e NuclearSacavémPortugal

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