Optical and Quantum Electronics

, Volume 44, Issue 3, pp 83–88

Band gap engineering approaches to increase InGaN/GaN LED efficiency

Authors

    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
  • K. Lorenz
    • Unidade de Física e Aceleradores, Instituto Tecnologico e Nuclear
  • A. Di Carlo
    • Department of Electronic EngineeringUniversity of Rome “Tor Vergata”
Article

DOI: 10.1007/s11082-011-9536-x

Cite this article as:
Auf der Maur, M., Lorenz, K. & Di Carlo, A. Opt Quant Electron (2012) 44: 83. doi:10.1007/s11082-011-9536-x

Abstract

Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.

Keywords

LEDNitridesSimulationIQEBand gap engineering

Copyright information

© Springer Science+Business Media, LLC. 2012