Optical and Quantum Electronics

, Volume 44, Issue 3, pp 83-88

First online:

Band gap engineering approaches to increase InGaN/GaN LED efficiency

  • M. Auf der MaurAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata” Email author 
  • , K. LorenzAffiliated withUnidade de Física e Aceleradores, Instituto Tecnologico e Nuclear
  • , A. Di CarloAffiliated withDepartment of Electronic Engineering, University of Rome “Tor Vergata”

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Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.


LED Nitrides Simulation IQE Band gap engineering