Optical and Quantum Electronics

, Volume 42, Issue 2, pp 89–95

Electron leakage effects on GaN-based light-emitting diodes


DOI: 10.1007/s11082-011-9437-z

Cite this article as:
Piprek, J. & Li, S. Opt Quant Electron (2010) 42: 89. doi:10.1007/s11082-011-9437-z


Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the droop. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.


Gallium nitrideLight-emitting diodeElectron leakageEfficiency droopElectron blocker layer

Copyright information

© Springer Science+Business Media, LLC. 2011

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA
  2. 2.Crosslight Software Inc.BurnabyCanada