Optical and Quantum Electronics

, Volume 41, Issue 9, pp 699–704

Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

Article

DOI: 10.1007/s11082-010-9381-3

Cite this article as:
Hu, W.D., Chen, X.S., Ye, Z.H. et al. Opt Quant Electron (2009) 41: 699. doi:10.1007/s11082-010-9381-3

Abstract

We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.

Keywords

Numerical simulation Design Two-color HgCdTe infrared photodiode Spectral photoresponse 

Copyright information

© Springer Science+Business Media, LLC. 2010

Authors and Affiliations

  1. 1.National Lab for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina
  2. 2.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical PhysicsChinese Academy of ScienceShanghaiChina

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