Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector
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- Hu, W.D., Chen, X.S., Ye, Z.H. et al. Opt Quant Electron (2009) 41: 699. doi:10.1007/s11082-010-9381-3
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We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.