Optical and Quantum Electronics

, Volume 40, Issue 14, pp 1149–1154

Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

Authors

    • Intense Ltd.
  • Stewart McDougall
    • Intense Ltd.
  • Dan Yanson
    • Intense Ltd.
  • John H. Marsh
    • Intense Ltd.
Article

DOI: 10.1007/s11082-009-9314-1

Cite this article as:
Qiu, B., McDougall, S., Yanson, D. et al. Opt Quant Electron (2008) 40: 1149. doi:10.1007/s11082-009-9314-1

Abstract

The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T 0.

Keywords

Red lasers InGaAlP InGaP High-power Quantum wells

Copyright information

© Springer Science+Business Media, LLC. 2009