, Volume 40, Issue 14-15, pp 1149-1154
Date: 21 Jun 2009

Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T 0.

This work was carried out while John Marsh was on secondment from the University of Glasgow.