Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes
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- Qiu, B., McDougall, S., Yanson, D. et al. Opt Quant Electron (2008) 40: 1149. doi:10.1007/s11082-009-9314-1
The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T 0.