Optical and Quantum Electronics

, Volume 40, Issue 1, pp 41–46

Characterization and optimization of high-power InGaAs/InP photodiodes

  • Huapu Pan
  • Andreas Beling
  • Hao Chen
  • Joe C. Campbell
Article

DOI: 10.1007/s11082-008-9230-9

Cite this article as:
Pan, H., Beling, A., Chen, H. et al. Opt Quant Electron (2008) 40: 41. doi:10.1007/s11082-008-9230-9

Abstract

The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device simulator based on a drift-diffusion model. Excellent agreement has been achieved between simulations and experiments. The origin of the degradation of responsivity at high optical injection level is investigated. Parameters of the photodiode are further optimized to maximize the saturation current without sacrificing bandwidth and responsivity.

Keywords

Photodiode High-power Saturation Modeling 

Copyright information

© Springer Science+Business Media, LLC. 2008

Authors and Affiliations

  • Huapu Pan
    • 1
  • Andreas Beling
    • 1
  • Hao Chen
    • 1
  • Joe C. Campbell
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of VirginiaCharlottesvilleUSA

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