Optical and Quantum Electronics

, Volume 38, Issue 4, pp 381–394

Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

  • Mariangela Gioannini
  • Alberto Sevega
  • Ivo Montrosset
Article

DOI: 10.1007/s11082-006-0038-1

Cite this article as:
Gioannini, M., Sevega, A. & Montrosset, I. Opt Quant Electron (2006) 38: 381. doi:10.1007/s11082-006-0038-1

Abstract

We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.

Keywords

gain intensity and frequency response linewidth enhancement factor quantum dot semiconductor laser 

Copyright information

© Springer 2006

Authors and Affiliations

  • Mariangela Gioannini
    • 1
  • Alberto Sevega
    • 1
  • Ivo Montrosset
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly