Journal of Nanoparticle Research

, Volume 13, Issue 6, pp 2469–2473

a-Si/SiNx multilayered light absorber for solar cell

  • A. K. Panchal
  • D. K. Rai
  • Meril Mathew
  • C. S. Solanki
Research Paper

DOI: 10.1007/s11051-010-0139-4

Cite this article as:
Panchal, A.K., Rai, D.K., Mathew, M. et al. J Nanopart Res (2011) 13: 2469. doi:10.1007/s11051-010-0139-4

Abstract

40 alternate a-Si/SiNx multilayer are incorporated as an absorber layer in a p–i–n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiNx layers. The a-Si and SiNx layers have thickness of ~3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of ~2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current–voltage (IV) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p–i–n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (VOC). The increment of bandgap energy in PL and high VOC of the device is attributed to the quantum confinement effect (QCE).

Keywords

a-Si/SiNx multilayerHR-TEMIVp–i–n Solar cellHWCVDQuantum confinement effectQuantum wellEnergy conversion

Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  • A. K. Panchal
    • 1
  • D. K. Rai
    • 1
  • Meril Mathew
    • 1
  • C. S. Solanki
    • 1
  1. 1.Department of Energy Science and EngineeringIndian Institute of Technology BombayMumbaiIndia