Journal of Nanoparticle Research

, Volume 11, Issue 5, pp 1179–1183

Synthesis and morphology evolution of GaN/C nanocables

Authors

  • Xuefeng Du
    • Shanghai Institute of CeramicsChinese Academy of Sciences
    • College of Material Science and EngineeringShanghai University
    • Shanghai Institute of CeramicsChinese Academy of Sciences
  • Tao Yang
    • Shanghai Institute of CeramicsChinese Academy of Sciences
  • Yue Shen
    • College of Material Science and EngineeringShanghai University
  • Yi Zeng
    • Shanghai Institute of CeramicsChinese Academy of Sciences
  • Fangfang Xu
    • Shanghai Institute of CeramicsChinese Academy of Sciences
Research Paper

DOI: 10.1007/s11051-008-9519-4

Cite this article as:
Du, X., Zhu, Y., Yang, T. et al. J Nanopart Res (2009) 11: 1179. doi:10.1007/s11051-008-9519-4

Abstract

GaN/C nanocables were synthesized via a thermochemical process. The GaN/C nanocables were composed of single crystalline GaN nanowire cores with a mean diameter of 80 nm and parallel carbon sheathes with a thickness of several nanometers. We find that GaN nanocables were partially evolved into waved GaN nanowires and discontinuously ordered nanodots within the carbon sheaths due to the decomposition of GaN at high temperature regions. Both the carbon sheathes and GaN nanowire cores show a high degree of crystalline perfection. This method may be applied to coat a wide range of nanostructures with carbon sheathes and prepare various hetrostructures, which may serve as potential building blocks in nanodevices.

Keywords

GaN/C nanocablesChemical vapour depositionCoatingsDecompositionNanostructure

Copyright information

© Springer Science+Business Media B.V. 2008