Abstract
Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O2. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination.
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Acknowledgements
This work was partly supported by Innovation Plaza Hiroshima of the Japan Science and Technology Agency (JST) and a Grant-in-Aid from the Ministry of Education, Sports, Culture, Science and Technology of Japan.
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Kashihara, N., Setyawan, H., Shimada, M. et al. Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma. J Nanopart Res 8, 395–403 (2006). https://doi.org/10.1007/s11051-005-9005-1
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DOI: https://doi.org/10.1007/s11051-005-9005-1