, Volume 48, Issue 5, pp 960-963,
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Quantum chemical modeling of the structure of strained silicon nanocrystals


The results of the atomic structure optimization and the calculation of electronic characteristics for strained silicon clusters Si51 on a germanium substrate are presented. The effects of deformation and the substrate on the distribution of electron state are analyzed.

Original Russian Text Copyright © 2007 by V. V. Filippov, S. I. Kurganskii, and N. S. Pereslavtseva
Translated from Zhurnal Strukturnoi Khimii, Vol. 48, No. 5, pp. 1016–1019, September–October, 2007.