Abstract
A ferroelectric/multiferroic/ferroelectric sandwiched structure composed by Na0.5Bi0.5TiO3 (NBT) and Bi1.07Nd0.03FeO3 (BNF) with a LaNiO3 buffer layer were prepared by a sol–gel method. X-ray diffraction indicated the NBT/BNF/NBT films exhibited a pure perovskite structure. The average grain size of BNF and NBT/BNF/NBT were found to be 40 and 80 nm, respectively. Interestingly, the electrical and ferroelectric properties such as leakage current, dielectric constant, and remnant polarization of NBT/BNF/NBT sandwiched layer, were superior to those of BNF single film. However, the saturation magnetization of NBT/BNF/NBT sandwiched layer was reduced. Our work suggested the NBT/BNF/NBT sandwiched layer with improved multiferroic characteristics have a promising application for future information storage devices.
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Acknowledgments
This work was supported by National Basic Research Program of China (No. 2012CB932702), Beijing Municipal Natural Science Foundation (No. 2122037), NCET, the NSFC (Nos. 11174031, 51371024, 51325101), PCSIRT, and Fundamental Research Funds for the Central Universities.
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Shao, F., Miao, J., Wu, S.Z. et al. Improved electrical and ferroelectric properties of multiferroic Na0.5Bi0.5TiO3/Bi1.07Nd0.03FeO3/Na0.5Bi0.5TiO3 sandwiched structure by a sol–gel process. J Mater Sci: Mater Electron 25, 2411–2415 (2014). https://doi.org/10.1007/s10854-014-1860-z
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DOI: https://doi.org/10.1007/s10854-014-1860-z