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Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

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Abstract

Bulk and quantum well GaAs1−xBix/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8–300 K and 1–250 mW (7–1,800 W/cm2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

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Acknowledgments

We gratefully acknowledge financial support through the National Science Foundation award DMR-0909028, the Natural Sciences and Engineering Research Council of Canada, the Deutsche Forschungsgemeinschaft (German Research Foundation), and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors.

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Authors and Affiliations

  1. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA

    Nathaniel A. Riordan, Chaturvedi Gogineni, Shane R. Johnson, Xianfeng Lu, Ding Ding & Yong-Hang Zhang

  2. Advanced Materials and Process Engineering Laboratory, Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z4, Canada

    Xianfeng Lu & Tom Tiedje

  3. Department of Electrical and Computer Engineering, University of Victoria, Victoria, BC, V8W 3P6, Canada

    Tom Tiedje

  4. Materials Science Center and Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032, Marburg, Germany

    Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz & Stephan W. Koch

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  1. Nathaniel A. Riordan
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  2. Chaturvedi Gogineni
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  3. Shane R. Johnson
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Correspondence to Shane R. Johnson.

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Riordan, N.A., Gogineni, C., Johnson, S.R. et al. Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs. J Mater Sci: Mater Electron 23, 1799–1804 (2012). https://doi.org/10.1007/s10854-012-0665-1

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  • DOI: https://doi.org/10.1007/s10854-012-0665-1

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