Journal of Materials Science: Materials in Electronics

, Volume 23, Issue 1, pp 174–179

Dielectric property and electrical conduction mechanism of ZrO2–TiO2 composite thin films

  • Ming Dong
  • Hao Wang
  • Liangping Shen
  • Yun Ye
  • Cong Ye
  • Yi Wang
  • Jun Zhang
  • Yong Jiang
Article

DOI: 10.1007/s10854-011-0378-x

Cite this article as:
Dong, M., Wang, H., Shen, L. et al. J Mater Sci: Mater Electron (2012) 23: 174. doi:10.1007/s10854-011-0378-x

Abstract

ZrO2–TiO2 composite films were fabricated by radio frequency magnetron sputtering and post annealing in O2. It was found the films remained amorphous below the annealing temperature of 500 °C. The as-deposited ZrO2–TiO2 film has a high dielectric constant of 22, and which increases to 34 after annealing at 400 °C. At low electric field, the dominant conduction mechanisms are Schottky emission for both the as-deposited and the annealed thin films. At high electric field, the conduction mechanism changes to space-charge-limited current and then changes to Poole–Frenkel (PF) emission after annealing at 400 °C.

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • Ming Dong
    • 1
  • Hao Wang
    • 2
  • Liangping Shen
    • 2
    • 3
  • Yun Ye
    • 2
  • Cong Ye
    • 2
  • Yi Wang
    • 2
  • Jun Zhang
    • 2
  • Yong Jiang
    • 4
  1. 1.State Key Laboratory of Electrical Insulation and Power EquipmentSchool of Electrical Engineering, Xi’an Jiaotong UniversityXi’anChina
  2. 2.Faculty of Physics and Electronic TechnologyHubei UniversityWuhanChina
  3. 3.College of Electrical and Electronic EngineeringHuazhong University of Science and TechnologyWuhanChina
  4. 4.School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingChina