Dielectric property and electrical conduction mechanism of ZrO2–TiO2 composite thin films
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- Dong, M., Wang, H., Shen, L. et al. J Mater Sci: Mater Electron (2012) 23: 174. doi:10.1007/s10854-011-0378-x
ZrO2–TiO2 composite films were fabricated by radio frequency magnetron sputtering and post annealing in O2. It was found the films remained amorphous below the annealing temperature of 500 °C. The as-deposited ZrO2–TiO2 film has a high dielectric constant of 22, and which increases to 34 after annealing at 400 °C. At low electric field, the dominant conduction mechanisms are Schottky emission for both the as-deposited and the annealed thin films. At high electric field, the conduction mechanism changes to space-charge-limited current and then changes to Poole–Frenkel (PF) emission after annealing at 400 °C.