Electrochemical deposition of CuInTe2 layers for applications in thin film solar cells
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- Muftah, G.E.A., Samantilleke, A.P., Warren, P.D. et al. J Mater Sci: Mater Electron (2010) 21: 373. doi:10.1007/s10854-009-9926-z
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Copper indium ditelluride (CuInTe2) has been electrochemically deposited from aqueous solution. Cyclic voltammetry analyses were used to determine suitable deposition parameters. As measured by Tallysurf and gravimetric techniques, the thickness of films deposited over a period of 3 h was found to be ~1.5 μm. X-ray diffraction, optical absorption and scanning electron microscopy have been used to investigate the bulk structure, energy bandgap and surface morphology of the material layers respectively. It was found that the material layers have polycrystalline chalcopyrite structure and bandgaps varied between 1.05 and 1.30 eV. Current-voltage characteristics of the CuInTe2/electrolyte, solid/liquid junctions were measured under dark and illuminated conditions. The layers were found to be photo active and p-type in electrical conduction.