Journal of Materials Science: Materials in Electronics

, Volume 21, Issue 4, pp 360–363

Structural stability of In2O3 films as sensor materials

Authors

  • V. Smatko
    • Institute of Electrotechnical Engineering
  • V. Golovanov
    • South-Ukrainian Pedagogical University
    • Case Western Reserve University
  • C. C. Liu
    • Case Western Reserve University
    • Ben-Gurion University of the Negev
  • D. Fuks
    • Ben-Gurion University of the Negev
  • I. Donchev
    • Institute of Electrotechnical Engineering
    • South-Ukrainian Pedagogical University
  • M. Ivanovskaya
    • Belarusian State University
Article

DOI: 10.1007/s10854-009-9921-4

Cite this article as:
Smatko, V., Golovanov, V., Liu, C.C. et al. J Mater Sci: Mater Electron (2010) 21: 360. doi:10.1007/s10854-009-9921-4

Abstract

A structural stability of In2O3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In2O3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In2O3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In2O3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In2O3 films led to improvement of their operational parameters.

Copyright information

© Springer Science+Business Media, LLC 2009