Journal of Materials Science: Materials in Electronics

, Volume 21, Issue 3, pp 252–255

Microwave dielectric properties of low temperature firing (Li1/2Nd1/2)WO4 ceramic

Authors

  • Huanfu Zhou
    • Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the EducationXi’an Jiaotong University
    • Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the EducationXi’an Jiaotong University
  • Kecheng Li
    • Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the EducationXi’an Jiaotong University
  • Minghui Zhang
    • Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the EducationXi’an Jiaotong University
  • Haibo Yang
    • Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the EducationXi’an Jiaotong University
Article

DOI: 10.1007/s10854-009-9901-8

Cite this article as:
Zhou, H., Wang, H., Li, K. et al. J Mater Sci: Mater Electron (2010) 21: 252. doi:10.1007/s10854-009-9901-8

Abstract

A new kind of low temperature sintering ceramic with composition of (Li1/2Nd1/2)WO4 were prepared by solid state reaction method. The phase and structure of the ceramics were characterized by X-ray diffraction (XRD), scanning electron microscopy. The microwave dielectric properties of the ceramics were studied using a network analyzer. All the XRD patterns can be fully indexed as single-phase tetragonal structure (I41/n), with lattice parameters a = b = 5.25789 Å and c = 11.39124 Å. The ceramic sintered at 775 °C for 4 h exhibits a good microwave dielectric properties with permittivity about 16.1, Q × f about 4,210 GHz and TCF about 142 ppm/°C.

Copyright information

© Springer Science+Business Media, LLC 2009