Journal of Materials Science: Materials in Electronics

, Volume 20, Issue 11, pp 1129–1134

Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

Authors

  • M. Devika
    • Department of PhysicsSri Venkateswara University
    • Department of PhysicsIndian Institute of Science
    • School of ChemistryTel Aviv University
  • S. Venkatramana Reddy
    • Department of PhysicsS. V. University PG Centre
  • K. Ramesh
    • Department of PhysicsIndian Institute of Science
    • Department of InstrumentationIndian Institute of Science
Article

DOI: 10.1007/s10854-008-9838-3

Cite this article as:
Devika, M., Koteeswara Reddy, N., Venkatramana Reddy, S. et al. J Mater Sci: Mater Electron (2009) 20: 1129. doi:10.1007/s10854-008-9838-3

Abstract

The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.

Copyright information

© Springer Science+Business Media, LLC 2008