Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
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- Frigeri, C., Serényi, M., Csik, A. et al. J Mater Sci: Mater Electron (2008) 19(Suppl 1): 289. doi:10.1007/s10854-007-9510-3
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A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 °C, time < 22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.