Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

  • C. Frigeri
  • M. Serényi
  • A. Csik
  • Z. Erdélyi
  • D. L. Beke
  • L. Nasi
Article

DOI: 10.1007/s10854-007-9510-3

Cite this article as:
Frigeri, C., Serényi, M., Csik, A. et al. J Mater Sci: Mater Electron (2008) 19(Suppl 1): 289. doi:10.1007/s10854-007-9510-3

Abstract

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 °C, time < 22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • C. Frigeri
    • 1
  • M. Serényi
    • 2
  • A. Csik
    • 3
  • Z. Erdélyi
    • 3
  • D. L. Beke
    • 3
  • L. Nasi
    • 1
  1. 1.CNR-IMEM InstituteParmaItaly
  2. 2.MTA-MFA InstituteBudapestHungary
  3. 3.Department of Solid State PhysicsUniversity of DebrecenDebrecenHungary