Journal of Materials Science: Materials in Electronics

, Volume 18, Issue 11, pp 1127–1130

Optical and structural properties of ZnO + Zn2TiO4 thin films prepared by the sol–gel method

Authors

  • Sandra A. Mayén-Hernández
    • Centro de Investigación y de Estudios Avanzados del I. P. N., Unidad Querétaro
  • Gerardo Torres-Delgado
    • Centro de Investigación y de Estudios Avanzados del I. P. N., Unidad Querétaro
    • Centro de Investigación y de Estudios Avanzados del I. P. N., Unidad Querétaro
  • Mario Gutiérrez Villarreal
    • Centro de Investigación en Química Aplicada
  • Alfredo Cruz-Orea
    • Depto. de FísicaCentro de Investigación y de Estudios Avanzados del I.P.N
  • Julio G. Mendoza Alvarez
    • Depto. de FísicaCentro de Investigación y de Estudios Avanzados del I.P.N
  • Orlando Zelaya-Angel
    • Depto. de FísicaCentro de Investigación y de Estudios Avanzados del I.P.N
Article

DOI: 10.1007/s10854-007-9267-8

Cite this article as:
Mayén-Hernández, S.A., Torres-Delgado, G., Castanedo-Pérez, R. et al. J Mater Sci: Mater Electron (2007) 18: 1127. doi:10.1007/s10854-007-9267-8

Abstract

ZnO + Zn2TiO4 thin films were obtained by the sol–gel method using precursor solutions with different Ti/Zn ratios in the 0.18–2.13 range. The films were deposited on glass substrates and annealed in an open atmosphere at 550 °C. The oxide was characterized by X-ray diffraction and photoacoustic (PA) spectroscopy. The films were constituted of polycrystalline ZnO for the lowest Ti/Zn ratio (0.18), polycrystalline Zn2TiO4 for the 0.70 and 1.0 ratios, and mixes of both oxides for the intermediate ratios (0.32 and 0.50). For the highest ratios studied (1.44 and 2.13), the films were amorphous. The energy band gap (Eg) values were determined from optical absorption spectra, measured by means of the PA technique spectra. Eg varied in the 3.15 eV (ZnO) to 3.70 eV (Zn2TiO4) range.

Copyright information

© Springer Science+Business Media, LLC 2007