Journal of Materials Science

, Volume 48, Issue 10, pp 3789–3797

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

  • Yuankun Zhu
  • Rueben J. Mendelsberg
  • Jiaqi Zhu
  • Jiecai Han
  • André Anders
Article

DOI: 10.1007/s10853-013-7179-y

Cite this article as:
Zhu, Y., Mendelsberg, R.J., Zhu, J. et al. J Mater Sci (2013) 48: 3789. doi:10.1007/s10853-013-7179-y

Abstract

Indium-doped cadmium oxide (CdO:In) films were prepared on glass and sapphire substrates by pulsed filtered cathodic arc deposition (PFCAD). The effects of substrate temperature, oxygen pressure, and an MgO template layer on film properties were systematically studied. The MgO template layers significantly influence the microstructure and the electrical properties of CdO:In films, but show different effects on glass and sapphire substrates. Under optimized conditions on glass substrates, CdO:In films with thickness of about 125 nm showed low resistivity of 5.9 × 10−5 Ωcm, mobility of 112 cm2/Vs, and transmittance over 80 % (including the glass substrate) from 500 to 1500 nm. The optical bandgap of the films was found to be in the range of 2.7 to 3.2 eV using both the Tauc relation and the derivative of transmittance. The observed widening of the optical bandgap with increasing carrier concentration can be described well only by considering bandgap renormalization effects along with the Burstein–Moss shift for a nonparabolic conduction band.

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Yuankun Zhu
    • 1
    • 2
  • Rueben J. Mendelsberg
    • 2
    • 3
  • Jiaqi Zhu
    • 1
  • Jiecai Han
    • 1
  • André Anders
    • 2
  1. 1.Harbin Institute of TechnologyHarbinPeople’s Republic of China
  2. 2.Lawrence Berkeley National LaboratoryPlasma Applications GroupBerkeleyUSA
  3. 3.Materials Science DivisionArgonne National LaboratoryArgonneUSA

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