Journal of Materials Science

, Volume 44, Issue 19, pp 5274–5287

Interface effects on highly epitaxial ferroelectric thin films

Ferroelectrics

DOI: 10.1007/s10853-009-3664-8

Cite this article as:
Lin, Y. & Chen, C.L. J Mater Sci (2009) 44: 5274. doi:10.1007/s10853-009-3664-8

Abstract

Interface effects have been found to play a key role in controlling the epitaxial nature and physical properties on the highly epitaxial ferroelectric thin films. Thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations. The natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in this article.

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science & Technology of ChinaChengduPeople’s Republic of China
  2. 2.Department of Physics and AstronomyUniversity of Texas at San AntonioSan AntonioUSA