Journal of Materials Science

, Volume 43, Issue 10, pp 3429–3434

Platinum thin films deposited on silicon oxide by focused ion beam: characterization and application

Authors

    • Center for Semiconductor Components (CCS)State University of Campinas (Unicamp)
  • M. M. da Silva
    • Center for Semiconductor Components (CCS)State University of Campinas (Unicamp)
  • J. Leon
    • Center for Semiconductor Components (CCS)State University of Campinas (Unicamp)
  • S. A. Moshkalev
    • Center for Semiconductor Components (CCS)State University of Campinas (Unicamp)
  • J. W. Swart
    • Center for Semiconductor Components (CCS)State University of Campinas (Unicamp)
NanoSmat 2007 - International Conference on Surfaces, Coatings and Nanostructured Materials

DOI: 10.1007/s10853-007-2402-3

Cite this article as:
Vaz, A.R., da Silva, M.M., Leon, J. et al. J Mater Sci (2008) 43: 3429. doi:10.1007/s10853-007-2402-3

Abstract

Focused ion beam system was used for deposition of platinum (Pt) thin films on thermally oxidized silicon (Si). Various test patterns (squares and lines) were deposited for electrical characterization of the films, using 2- and 4-terminal measurements. Tests with parallel Pt lines were also carried out, and considerable leakage was detected for the interline distances in the sub-micron range. We investigated two ways to decrease the leakage current: inducing surfaces roughness and using an oxygen plasma after patterns deposition. A method of dielectrophoresis with an AC electric field was applied to align and deposit metallic multi-wall carbon nanotubes (CNT) between pre-fabricated metal, gold, and palladium electrodes with a micron-scale separation. Further, using focused electron and ion beam-deposited Pt contacts in two different configurations (“Pt-on-CNT” and “CNT-on-Pt”), 4-terminal measurements have been performed to evaluate intrinsic nanotube resistances.

Copyright information

© Springer Science+Business Media, LLC 2008