Journal of Materials Science

, Volume 42, Issue 18, pp 7643–7646

In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85

  • Bruce A. Cook
  • Xuezheng Wei
  • Joel L. Harringa
  • Matthew J. Kramer
Article

DOI: 10.1007/s10853-007-1898-x

Cite this article as:
Cook, B.A., Wei, X., Harringa, J.L. et al. J Mater Sci (2007) 42: 7643. doi:10.1007/s10853-007-1898-x

Abstract

(AgSbTe2)15(GeTe)85 (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4–1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 °C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 °C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed.

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Bruce A. Cook
    • 1
  • Xuezheng Wei
    • 1
  • Joel L. Harringa
    • 1
  • Matthew J. Kramer
    • 1
    • 2
  1. 1.Ames Laboratory Materials and Engineering Physics ProgramIowa State UniversityAmesUSA
  2. 2.Department of Materials Science and EngineeringIowa State UniversityAmesUSA