Journal of Materials Science

, Volume 42, Issue 3, pp 1026–1030

High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate

  • Joo-Won Lee
  • Byeong-Kwon Ju
  • Jin Jang
  • Young-Soo Yoon
  • Jai-Kyeong Kim
Article

DOI: 10.1007/s10853-006-1046-z

Cite this article as:
Lee, JW., Ju, BK., Jang, J. et al. J Mater Sci (2007) 42: 1026. doi:10.1007/s10853-006-1046-z

Abstract

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow-mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide (ZrO2) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility 0.66 cm2/V s and Ion/Ioff > 105 was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Joo-Won Lee
    • 1
    • 2
  • Byeong-Kwon Ju
    • 3
  • Jin Jang
    • 2
  • Young-Soo Yoon
    • 4
  • Jai-Kyeong Kim
    • 1
  1. 1.Opto-Electric Materials Research CenterKorea Institute of Science and TechnologySeoulKorea
  2. 2.Department of PhysicsKyunghee UniversitySeoulKorea
  3. 3.Department of Electrical EngineeringKorea UniversitySeoulKorea
  4. 4.Department of Advanced Technology FusionKonkuk UniversitySeoulKorea

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