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Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes

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Abstract

We present a study on the effects of resistive-bridging defects in the SRAM core-cell, considering different industrial technology nodes: 90 nm, 65 nm and 40 nm. We have performed an extensive number of electrical simulations, varying the resistance value of the defects, the supply voltage, the memory size and the temperature. We identified the worst-case conditions maximizing failure occurrence in presence of defects. Results also show that resistive-bridging defects cause malfunction in the defective core-cell, as well as in non-defective core-cells located in the same row and/or column. Moreover, the weak read fault is the fault that is the most likely to occur due to resistive-bridging defects. Finally, the sensitivity of SRAMs to resistive-bridging defects increases with the advance of technology nodes.

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Authors and Affiliations

  1. Department of Microelectronics, LIRMM, University of Montpellier 2/CNRS, 161 rue Ada, 34095, Montpellier cedex 05, France

    Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch & Arnaud Virazel

  2. Intel Mobile Communications, 2600, route des Crêtes, 06560, Sophia-Antipolis, France

    Nabil Badereddine

Authors
  1. Renan Alves Fonseca
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  2. Luigi Dilillo
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  3. Alberto Bosio
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  4. Patrick Girard
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  5. Serge Pravossoudovitch
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  6. Arnaud Virazel
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  7. Nabil Badereddine
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Corresponding author

Correspondence to Luigi Dilillo.

Additional information

Responsible Editor: D. Gizopoulos

This work has been funded by the French government under the framework of the CATRENE CT302 “TOETS” European project

This paper is an extended version of a preliminary study published in European Test Symposium 2010, entitled “Analysis of Resistive- Bridging Defects in SRAM Core-Cells: a Comparative Study from 90 nm down to 40 nm Technology Nodes”.

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Alves Fonseca, R., Dilillo, L., Bosio, A. et al. Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. J Electron Test 28, 317–329 (2012). https://doi.org/10.1007/s10836-012-5291-6

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  • DOI: https://doi.org/10.1007/s10836-012-5291-6

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