Abstract
Transparent conducting aluminium-doped Zinc oxide (ZnO:Al) films have been deposited on glass substrates by magnetron dc sputtering using a ceramic target (ZnO with 2 wt% Al2O3). The dependence of the electrical and optical properties of these films on substrate temperature, sputtering pressure of Ar and location of substrates were investigated in detail. Target is perpendicular with substrate and we controlled the distance ‘x’ of target and substrate. Optimized films with resistivity of 3.7 × 10−4 Ω cm, an average transmission in the visible range (300–800 nm) of greater than 85% and the reflectance in the infrared range being greater than 85% have been formed. Substrate temperature, distance ‘x’, and working pressure are optimized for lower resistivity and high concentration of carriers.
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Acknowledgement
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the IT Foreign Specialist Inviting Program (ITFSIP) supervised by the Institute of Information Technology Advancement (IITA).
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Dao, V.A., Le, T., Tran, T. et al. Electrical and optical studies of transparent conducting ZnO:Al thin films by magnetron dc sputtering. J Electroceram 23, 356–360 (2009). https://doi.org/10.1007/s10832-008-9466-6
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DOI: https://doi.org/10.1007/s10832-008-9466-6