Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
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- Sorée, B., Magnus, W. & Pourtois, G. J Comput Electron (2008) 7: 380. doi:10.1007/s10825-008-0217-3
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We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.