, Volume 7, Issue 3, pp 380-383
Date: 21 Feb 2008

Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode

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Abstract

We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.