Journal of Computational Electronics

, Volume 7, Issue 3, pp 380–383

Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode

Article

DOI: 10.1007/s10825-008-0217-3

Cite this article as:
Sorée, B., Magnus, W. & Pourtois, G. J Comput Electron (2008) 7: 380. doi:10.1007/s10825-008-0217-3

Abstract

We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.

Keywords

Nanowire JFET Analytical model Poisson–Schrödinger Device physics 

Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  1. 1.IMECLeuvenBelgium
  2. 2.Universiteit AntwerpenAntwerpenBelgium

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