Quantum Potential Approach to Modeling Nanoscale MOSFETs
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We propose a novel parameter-free quantum potential scheme for use in conjunction with particle-based simulations. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy. The approach has been tested on the example of a MOS-capacitor by retrieving the correct sheet electron density. It has also been used in simulations of a 25 nm n-channel nanoscale MOSFET with high substrate doping density. We find that the use of the quantum potential approach gives rise to a threshold voltage shift of about 220 mV and drain current degradation of about 30%.
- D.K. Ferry, “The onset of quantization in ultra-submicron semiconductor devices”, Superlatt & Microst., 27, 61 (2000).
- G.J. Iafrate, H.L. Grubin, and D.K. Ferry, “Utilization of quantum distribution functions for ultra-submicron device transport,” Journal de Physique, 42 (Colloq. 7), 307 (1981).
- C. Ringhofer, C. Gardner and D. Vasileska, “Effective potentials and quantum fluid models: A thermodynamic approach,” Inter. J. on High Speed Electronics and Systems, 13, 771 (2003). CrossRef
- M.J. van Dort et al., “Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping,” IEDM Tech. Dig., 495 (1991).
- Quantum Potential Approach to Modeling Nanoscale MOSFETs
Journal of Computational Electronics
Volume 4, Issue 1-2 , pp 57-61
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- Kluwer Academic Publishers
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- quantum potential
- SOI devices
- Monte Carlo simulations
- nanoscale MOSFETs
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