Journal of Computational Electronics

, Volume 4, Issue 1, pp 57–61

Quantum Potential Approach to Modeling Nanoscale MOSFETs

Authors

    • Department of Electrical EngineeringArizona State University
  • Dragica Vasileska
    • Department of Electrical EngineeringArizona State University
  • Clemens Heitzinger
    • Department of MathematicsArizona State University
  • Christian Ringhofer
    • Department of MathematicsArizona State University
Article

DOI: 10.1007/s10825-005-7107-8

Cite this article as:
Ahmed, S.S., Vasileska, D., Heitzinger, C. et al. J Comput Electron (2005) 4: 57. doi:10.1007/s10825-005-7107-8

Abstract

We propose a novel parameter-free quantum potential scheme for use in conjunction with particle-based simulations. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy. The approach has been tested on the example of a MOS-capacitor by retrieving the correct sheet electron density. It has also been used in simulations of a 25 nm n-channel nanoscale MOSFET with high substrate doping density. We find that the use of the quantum potential approach gives rise to a threshold voltage shift of about 220 mV and drain current degradation of about 30%.

Keywords

quantum potentialSOI devicesMonte Carlo simulationsnanoscale MOSFETs
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Copyright information

© Springer Science + Business Media, Inc. 2005