Article

Journal of Computational Electronics

, Volume 3, Issue 3, pp 379-385

First online:

Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples

  • S. E. LauxAffiliated withIBM Research Division T.J. Watson Research Center, Semiconductor Research and Development Center (SRDC) Email author 

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach.

Keywords

quantum transport ballistic DGFET Ge crystallographic orientation