Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples
- S. E. Laux
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The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach.
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- Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples
Journal of Computational Electronics
Volume 3, Issue 3-4 , pp 379-385
- Cover Date
- Print ISSN
- Online ISSN
- Kluwer Academic Publishers
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- quantum transport
- crystallographic orientation
- Industry Sectors
- S. E. Laux (1)
- Author Affiliations
- 1. IBM Research Division T.J. Watson Research Center, Semiconductor Research and Development Center (SRDC), P.O. Box 218, Yorktown Heights, NY, 10598, USA