Journal of Applied Spectroscopy

, Volume 75, Issue 6, pp 805–809

Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission

  • L. I. Burov
  • A. S. Gorbatsevich
  • A. G. Ryabtsev
  • G. I. Ryabtsev
  • A. N. Imenkov
  • Yu. P. Yakovlev
Article

DOI: 10.1007/s10812-009-9128-8

Cite this article as:
Burov, L.I., Gorbatsevich, A.S., Ryabtsev, A.G. et al. J Appl Spectrosc (2008) 75: 805. doi:10.1007/s10812-009-9128-8
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The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λgen ∼ 3.3 µm) is obtained for various stripe widths w by means of numerical solution of the wave equation in the 2D approximation taking into account the refractive index nonlinearity. It has been shown that the special distribution of emission intensity becomes strongly inhomogeneous at w values exceeding 9–10 µm, which results in the appearance of additional maxima in the far-field pattern. Calculated far-field patterns in the active layer plane of the LD agree with corresponding experimental data.

Key words

laser diodestripeemission intensityfar-field pattern

Copyright information

© Springer Science+Business Media, Inc. 2008

Authors and Affiliations

  • L. I. Burov
    • 1
  • A. S. Gorbatsevich
    • 1
  • A. G. Ryabtsev
    • 1
  • G. I. Ryabtsev
    • 2
  • A. N. Imenkov
    • 3
  • Yu. P. Yakovlev
    • 3
  1. 1.Belorusian State UniversityMinskBelarus
  2. 2.B. I. Stepanov Institute of PhysicsNational Academy of Sciences of BelarusMinskBelarus
  3. 3.A. F. Ioffe Physico-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia