Thermal Conductivity Measurement of Thermally-Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique
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This paper describes the development of an advanced method to measure the normal-to-plane thermal conductivity of very-thin insulating films. In this method the metal film layer, which is deposited on thin insulating films, is Joule heated periodically and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the three-layered system was solved analytically, and a quite simple and accurate approximate equation was derived. In this method, calibration factors of the thermo-reflectance coefficient were determined using the known thermal effusivity of the substrate. The present method was examined for thermally-oxidized SiO2 films (1000--20 nm thick) on a silicon wafer. The present results of the thermal conductivity agree with those of VAMAS TWA23 within ±10%.
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- Thermal Conductivity Measurement of Thermally-Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique
International Journal of Thermophysics
Volume 26, Issue 1 , pp 179-190
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- thermal conductivity
- thin film
- periodic method
- silicon dioxide
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