1–8 GHz high efficiency single-stage travelling wave power amplifier
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- Sayginer, M., Yazgi, M., Kuntman, H.H. et al. Analog Integr Circ Sig Process (2013) 74: 111. doi:10.1007/s10470-012-9863-2
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This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier’s gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier’s bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average Psat of 29.5 dBm and Pout,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the Psat and Pout,1 dB, respectively.