The European Physical Journal B - Condensed Matter and Complex Systems

, Volume 21, Issue 2, pp 185–190

Formation of porous silicon: an in situ investigation with high-resolution X-ray diffraction

  • V. Chamard
  • C. Pichat
  • G. Dolino
Article

DOI: 10.1007/s100510170194

Cite this article as:
Chamard, V., Pichat, C. & Dolino, G. Eur. Phys. J. B (2001) 21: 185. doi:10.1007/s100510170194
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Abstract:

The single crystal property of p+ type porous silicon is used to investigate the formation mechanisms of this material by in situ X-ray diffraction. During anodisation, the diffraction peak of the porous silicon layer exhibits a lattice parameter expansion, with the usual value. For long anodisation time, a parasitic chemical dissolution leads to a regular and homogeneous decrease of lattice mismatch, also observed during pure chemical dissolution.

PACS. 61.10.Eq X-ray scattering (including small-angle scattering)68.55.-a Thin film structure and morphology81.07.-b Nanoscale materials and structures: fabrication and characterization68.55.Ac Nucleation and growth: microscopic aspects

Copyright information

© EDP Sciences, Springer-Verlag 2001

Authors and Affiliations

  • V. Chamard
    • 1
  • C. Pichat
    • 1
  • G. Dolino
    • 1
  1. 1.Laboratoire de Spectrométrie Physique, Université J. Fourier Grenoble 1Saint Martin d'Hères CedexFrance