Formation of porous silicon: an in situ investigation with high-resolution X-ray diffraction
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- Chamard, V., Pichat, C. & Dolino, G. Eur. Phys. J. B (2001) 21: 185. doi:10.1007/s100510170194
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The single crystal property of p+ type porous silicon is used to investigate the formation mechanisms of this material by in situ X-ray diffraction. During anodisation, the diffraction peak of the porous silicon layer exhibits a lattice parameter expansion, with the usual value. For long anodisation time, a parasitic chemical dissolution leads to a regular and homogeneous decrease of lattice mismatch, also observed during pure chemical dissolution.