, Volume 6, Issue 3, pp 257-260

Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells

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We have discussed the resolution of submicron photoluminescence (PL) imaging using a solid immersion lens (SIL), which collects an evanescent light field. We apply the SIL microscope to measure PL image of a strip-line-patterned GaAs quantum well structure at low temperature. An improved resolution beyond diffraction limit and high collection efficiency of PL are realized.

This paper was originally presented at the 5th International Conference on NEAR FIELD OPTICS and RELATED TECHNOLOGIES (NFO-5), which was held on December 6–10, 1998 at Coganoi Bay Hotel, Shirahama, Japan, in cooperation with the Japan Society of Applied Physics and Mombusho Grant-in Aid for Scientific Research on Priority Areas “Nearfield Nano-optics” Project, sponsored by Japan Society for the Promotion of Science.