Optical Review

, Volume 16, Issue 6, pp 575–577

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Authors

  • Yi-Jung Liu
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
  • Chih-Hung Yen
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
  • Chia-Hao Hsu
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
  • Kuo-Hui Yu
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
  • Li-Yang Chen
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
  • Tsung-Han Tsai
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
    • Institute of Microelectronics, Department of Electrical EngineeringNational Cheng-Kung University
Letters

DOI: 10.1007/s10043-009-0113-5

Cite this article as:
Liu, Y., Yen, C., Hsu, C. et al. OPT REV (2009) 16: 575. doi:10.1007/s10043-009-0113-5

Abstract

An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

Keywords

GaNlight-emitting diode (LED)In2O3ITOspecific contact resistancetransparent and conductive oxide (TCO)
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Copyright information

© The Optical Society of Japan 2009