, Volume 16, Issue 6, pp 575-577
Date: 19 Jun 2010

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access


An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.