Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping
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- Sugimoto, Y., Tsumori, N., Nomura, S. et al. OPT REV (2009) 16: 269. doi:10.1007/s10043-009-0050-3
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Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.