Optical Review

, Volume 16, Issue 3, pp 269–273

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

  • Yoshiaki Sugimoto
  • Nobuhiro Tsumori
  • Shintaro Nomura
  • Toshiharu Saiki
Regular Papers

DOI: 10.1007/s10043-009-0050-3

Cite this article as:
Sugimoto, Y., Tsumori, N., Nomura, S. et al. OPT REV (2009) 16: 269. doi:10.1007/s10043-009-0050-3

Abstract

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.

Keywords

photoluminescence imaging spectroscopyinterfacial fluctuation quantum dotnear-field scanning microscopemulti excitoncharged excitonfinite-difference time-domain calculation method

Copyright information

© The Optical Society of Japan 2009

Authors and Affiliations

  • Yoshiaki Sugimoto
    • 1
  • Nobuhiro Tsumori
    • 1
  • Shintaro Nomura
    • 2
  • Toshiharu Saiki
    • 1
    • 3
  1. 1.School of Integrated Design EngineeringKeio UniversityYokohamaJapan
  2. 2.Institute of PhysicsUniversity of TsukubaTsukuba, IbarakiJapan
  3. 3.Kanagawa Academy of Science and TechnologyKawasakiJapan