Two Beam Coupling in Semi-Insulating GaN Film Using Electroabsorption Effect
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- Innami, T., Fujimura, R., Nomura, M. et al. OPT REV (2005) 12: 448. doi:10.1007/s10043-005-0448-5
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The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in the UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling.