Optical Review

, Volume 9, Issue 5, pp 186–188

Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing

  • Jiro Hashizume
  • Satoshi Shinada
  • Fumio Koyama
  • Kenichi Iga
LASERS

DOI: 10.1007/s10043-002-0186-x

Cite this article as:
Hashizume, J., Shinada, S., Koyama, F. et al. OPT REV (2002) 9: 186. doi:10.1007/s10043-002-0186-x

Abstract

We demonstrate a novel optical probing technique using the reflection-induced change in voltage of a GaAs vertical cavity surface emitting laser (VCSEL). We present the modeling and experiment of the VCSEL based probing. A two-dimensional image probing is successfully demonstrated.

Key words

VCSELreflectionvoltage changeoptical storagecontact head

Copyright information

© The Optical Society of Japan 2002

Authors and Affiliations

  • Jiro Hashizume
    • 1
  • Satoshi Shinada
    • 1
  • Fumio Koyama
    • 1
  • Kenichi Iga
    • 1
    • 2
  1. 1.Microsystem Research Center, P&I Lab.Tokyo Institute of TechnologyMidori-ku, YokohamaJapan
  2. 2.Japan Society for the Promotion of Science/Kogakuin UniversityChiyoda-ku, TokyoJapan