Journal of Solid State Electrochemistry

, Volume 14, Issue 5, pp 797–802

Influence of laser microfabrication on silicon electrochemical behavior in HF solution

  • Kestutis Juodkazis
  • Jurga Juodkazytė
  • Putinas Kalinauskas
  • Titas Gertus
  • Edgaras Jelmakas
  • Hiroaki Misawa
  • Saulius Juodkazis
Original Paper

DOI: 10.1007/s10008-009-0852-z

Cite this article as:
Juodkazis, K., Juodkazytė, J., Kalinauskas, P. et al. J Solid State Electrochem (2010) 14: 797. doi:10.1007/s10008-009-0852-z

Abstract

Influence of direct laser writing with femtosecond pulses on electrochemical etching of n-type low conductivity (>1,000 Ωcm) silicon is demonstrated. It has been shown that thermal 1-µm-thick SiO2 layer on silicon surface can be used as a protective layer in the electrochemical etching process. It has been found that laser ablation changes not only the surface morphology and structure of silicon samples but also the character of their anodic etching in aqueous solution of hydrofluoric acid. Formation of microvoids and caverns of irregular shape has been observed at the laser-ablated sites. It is proposed that the change of silicon conductivity from n- to p-type takes place at the laser fabricated regions. Processes of Si anodic oxidation and electrochemical etching are discussed.

Keywords

Laser microfabrication Si electrochemical processes HF solution 

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Kestutis Juodkazis
    • 1
  • Jurga Juodkazytė
    • 1
  • Putinas Kalinauskas
    • 1
  • Titas Gertus
    • 2
    • 3
  • Edgaras Jelmakas
    • 4
  • Hiroaki Misawa
    • 5
  • Saulius Juodkazis
    • 5
  1. 1.Institute of ChemistryVilniusLithuania
  2. 2.Altechna Co. Ltd.VilniusLithuania
  3. 3.Laser Research CenterVilnius UniversityVilniusLithuania
  4. 4.Institute of Materials Science and Applied ResearchVilniusLithuania
  5. 5.Research Institute for Electronic ScienceHokkaido UniversitySapporoJapan

Personalised recommendations