This paper presents a study on a system comprised of a low-dimensional structure (Ga1-xAlxAs and GaAs quantum well wire), an intense laser field and an applied magnetic field in axial direction, resulting in a modified structure by interaction with the laser field. A variation of the concentration of aluminum is considered. So, the characteristics of the semiconductor such as the effective mass and width of the forbidden band vary due to the aluminum concentration. The electronic Landé factor control by changing of both intensity and frequency of a laser field on cylindrical quantum well wire was also reported. We use the laser dressed approximation for the treated “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied in the parallel direction of symmetric axis of the quantum well wire. We take into account non-parabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.
Landé FactorLaser dressingMagnetic fieldQuantum well wireSemiconductors