Mechanical stress measurements using micro-Raman spectroscopy
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The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.
- Mechanical stress measurements using micro-Raman spectroscopy
Volume 5, Issue 1 , pp 13-17
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