Microsystem Technologies

, Volume 5, Issue 1, pp 13–17

Mechanical stress measurements using micro-Raman spectroscopy


  • I. De Wolf
    • IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • H. E. Maes
    • IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

DOI: 10.1007/s005420050134

Cite this article as:
De Wolf, I. & Maes, H. Microsystem Technologies (1998) 5: 13. doi:10.1007/s005420050134


 The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.

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© Springer-Verlag Berlin Heidelberg 1998